Wafers

EPD < 5×10³ρ > 10⁷ Ω·cmRF, radar, 5GSi-doped n-type GaAs150 mm
EPD < 500n 0.5–5×10¹⁸VCSELs, lasersS-doped n-type InP100 mm
EPD < 500n 1–8×10¹⁸Lasers, PICsFe-doped semi-insulating InP100 mm
EPD < 5×10³ρ > 10⁷ Ω·cmHEMT, DHBTUndoped InP100 mm
EPD On requestn 10¹⁵–10¹⁶Research, epitaxy
All values are design targets from the Dyber Technical Paper Series. Measured data follows first production.