S-doped n-type InP
The standard substrate for telecom and data-center lasers and photonic integrated circuits.
| Diameter | 100.0 ± 0.2 mm |
|---|---|
| Orientation | (100) ± 0.5°; off-cut 0° or 2° |
| Thickness | 625 ± 20 µm |
| Carrier concentration | 1–8×10¹⁸ cm⁻³ |
| EPD | < 500 cm⁻² |
| Twins, inclusions | None in shipped wafers |
| TTV / warp / bow | < 5 / < 10 / < 8 µm |
| Surface | Epi-ready |