Undoped InP
Low-background n-type InP for research and specialty epitaxy.
| Diameter | 100.0 ± 0.2 mm |
|---|---|
| Orientation | (100) ± 0.5°; off-cut 0° or 2° |
| Thickness | 625 ± 20 µm |
| Carrier concentration | 10¹⁵–10¹⁶ cm⁻³ |
| Twins, inclusions | None in shipped wafers |
| TTV / warp / bow | < 5 / < 10 / < 8 µm |
| Surface | Epi-ready |