Si-doped n-type GaAs
Low-dislocation GaAs for VCSEL and laser epitaxy, where substrate defects propagate straight into the device.
| Diameter | 150.0 ± 0.2 mm |
|---|---|
| Orientation | (100); off-cut 0°, 2° or 6° to [110] |
| Thickness | 675 ± 15 µm |
| Carrier concentration | 0.5–5×10¹⁸ cm⁻³ |
| Resistivity | 1–5×10⁻³ Ω·cm |
| Hall mobility | 1500–2500 cm²/V·s |
| EPD (average) | < 500 cm⁻²; target < 100 |
| TTV / warp / bow | < 5 / < 10 / < 8 µm |
| Surface | Epi-ready |