Semi-insulating GaAs
High-resistivity GaAs for pHEMT and HBT radio chips. Resistivity isolates devices and permits through-wafer vias.
| Diameter | 150.0 ± 0.2 mm |
|---|---|
| Orientation | (100) ± 0.5°; off-cut 0° or 2° to [110] |
| Thickness | 675 ± 20 µm |
| Resistivity (RT) | > 1×10⁷ Ω·cm; typical 1–5×10⁸ |
| Hall mobility | > 5000 cm²/V·s |
| EPD (average) | < 5×10³ cm⁻² |
| TTV / warp / bow | < 10 / < 15 / < 10 µm |
| Surface | Epi-ready |