Fe-doped semi-insulating InP
Semi-insulating InP for the fastest electronic devices: HEMTs and DHBTs for millimeter-wave and optical links.
| Diameter | 100.0 ± 0.2 mm |
|---|---|
| Orientation | (100) ± 0.5°; off-cut 0° or 2° |
| Thickness | 625 ± 20 µm |
| Resistivity | > 10⁷ Ω·cm |
| EPD | < 5×10³ cm⁻² |
| Twins, inclusions | None in shipped wafers |
| TTV / warp / bow | < 5 / < 10 / < 8 µm |
| Surface | Epi-ready |